DC bias, operating point, and switching analysis for transistors
BJT: VB = Vcc × R2/(R1+R2) | VE = VB − 0.7 | IC ≈ IE = VE/RE | VCE = Vcc − IC×(RC+RE)
MOSFET Saturation: ID = (Kn/2) × (VGS − VTH)² if VDS > VGS − VTH
MOSFET Linear: ID = Kn × [(VGS−VTH)×VDS − VDS²/2] if VDS < VGS − VTH
BJT Switch: IB_min = IC / β | Add ×3 safety factor | RB = (Vin − 0.7) / IB