An NPN BJT has β=100. A 5 V input drives the base through RB=10kΩ. Take VBE(on)=0.7V. The collector connects to VCC=12V through RC=1kΩ. Find IB, β⋅IB, the actual IC, and decide whether the transistor is in the active or saturation region.
- Given. Vin=5V, RB=10kΩ, VBE=0.7V, β=100, VCC=12V, RC=1kΩ, VCE(sat)=0.2V.
- Compute base current. KVL around the base loop:
IB=(Vin−VBE)/RB=(5−0.7)/10kΩ=0.43mA - Compute β⋅IB (what the transistor would pass).
β⋅IB=100×0.43mA=43mA - Compute the saturation cap. The maximum current the load can carry once VCE bottoms out at VCE(sat):
IC,max=(VCC−VCE,sat)/RC=(12−0.2)/1kΩ=11.8mA - Compare. β⋅IB=43mA > IC,max=11.8mA. The load resistor cannot pass that much current — the transistor saturates.
IC=IC,max=11.8mA,VCE=VCE,sat=0.2V - Sanity-check the overdrive ratio. β⋅IB/IC,max=43/11.8≈3.6. The base is overdriven by ≈3.6×, which is good engineering practice — even if β sags from 100 to 30 (extreme temperature, low IC), the transistor still saturates.
β⋅IB is the answer the transistor
wants to give. The actual
IC is the
min of
β⋅IB and
(VCC−VCE,sat)/RC — whichever the load can support.