Common-Emitter & Common-Source Amplifier

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1. The voltage-amplifier role

VCCR1R2RCRECEvoutvinCE (BJT)VDDRG1RG2RDRSCSvoutvinCS (FET)
Figure 1. CE (left) and CS (right) amplifiers — voltage-divider bias, input at base/gate, output at collector/drain.

👉 Simple analogy — see-saw / lever

  • Input side goes up → output side goes down (inverting).
  • The leverage (gain magnitude) depends on RCR_C and gmg_m — bigger lever, bigger swing.
  • A small wiggle at the base produces a big inverted wiggle at the output.

1.1 What it does

Takes a small input voltage swing at the base (or gate) and produces a much larger,inverted voltage swing at the collector (or drain).

1.2 The “voltage amplifier” role

High gain, inverting, moderate input impedance, moderate output impedance. The workhorse of analog signal-chain design.

1.3 Why inverting?

When VBEV_{BE} (or VGSV_{GS}) goes UP, ICI_C (or IDI_D) goes UP. More current drops more voltage across RCR_C, so VC=VCCICRCV_C = V_{CC} - I_C R_C goes DOWN. The output is 180° out of phase with the input.

2. Small-signal gain derivation

Brπ+vbeECgm·vbeRCrovout
Figure 2. CE hybrid-π small-signal model: r_π carries v_be; g_m·v_be drives R_C ∥ r_o ∥ R_L to produce v_out.

👉 Simple analogy — water taps in parallel

  • The transistor's current source is like a tap pouring gmvbeg_m \cdot v_{be} amperes into a bucket.
  • RCR_C, ror_o, and RLR_L are three drains on the bucket.
  • Voltage rise = current ÷ total drain rate = current × (parallel resistance). Bigger drains → smaller gain.

2.1 Strip away DC

Replace VCCV_{CC} with AC ground — DC supplies have zero impedance to signals. Any bypass capacitor also becomes a short at signal frequencies.

2.2 Plug in the model

Replace the transistor with its hybrid-π (BJT) or FET small-signal model. With the bypass cap present, RER_E (or RSR_S) shorts to AC ground.

2.3 Apply Ohm's law

The controlled current gmvbeg_m v_{be} flows through RCroRLR_C \| r_o \| R_L. The output voltage is:

Av=voutvin=gm(RCroRL)(BJT, with bypass)A_v = \frac{v_{out}}{v_{in}} = -g_m \cdot (R_C \| r_o \| R_L) \quad \text{(BJT, with bypass)}
Av=gm(RDroRL)(FET, with bypass)A_v = -g_m \cdot (R_D \| r_o \| R_L) \quad \text{(FET, with bypass)}

Where:

  • gmg_m is the transconductance from Topic 1 (typically 40–100 mA/V at IC1mAI_C \approx 1\,\text{mA}).
  • RCroRLR_C \| r_o \| R_L is the parallel combination of all resistances at the output node.
  • The minus sign means invertingVoutV_{out} is 180° out of phase with VinV_{in}.

3. Signal swing along the load line

Now that we know the gain, let's see what the signal actually does on the output characteristic family from Topic 1.

Q (VCEQ = ½VCC)↑ peak (iB=100µA)→ saturation↓ trough (iB=20µA)→ cut-off02468101201020304050607080VCE (V)IC (mA)0µA20µA40µA60µA80µA100µAVCC/RCVCC½VCCICQIC,maxIC,minVCE,minVCE,maxSaturationActive regionCut-offiC(ωt)ωtVCE(ωt) — inverted180° ↕
Figure 3. BJT textbook construction. The operating point slides along the load line as iB(ωt)i_B(\omega t) swings (diagonal axis, upper right). Left strip: iC(ωt)i_C(\omega t) — sinusoid in phase with input. Bottom strip: VCE(ωt)V_{CE}(\omega t) — inverted sinusoid (180° out of phase). Dashed green lines project the swing-extreme dots to both axes.

3.1 The Q-point is the rest position

With no input signal, the operating point sits at the Q-point — VCEVCC/2V_{CE} \approx V_{CC}/2, on the chosen IBI_B curve. Both halves of the swing have equal headroom.

3.2 The signal slides along the load line

Apply a small AC vinv_{in}. The base current swings from IBΔibI_B - \Delta i_b to IB+ΔibI_B + \Delta i_b, so the operating point hops between higher and lower IBI_B curves.

The constraint VCE=VCCICRCV_{CE} = V_{CC} - I_C \cdot R_C still holds, so the operating point stays on the load line — it just slides up and down along it.

3.3 Output is inverted

When ICI_C goes UP (because vinv_{in} pushed vbev_{be} UP), VCE=VCCICRCV_{CE} = V_{CC} - I_C \cdot R_C goes DOWN. Hence the inverting nature of CE/CS.

The minus sign in the gain formula is the inversion:

Av=gm(RCroRL)A_v = -g_m \cdot (R_C \| r_o \| R_L)

3.4 Clipping — when you push too hard

If the input swing is large enough, the operating point hits a region boundary. At the top of the load line you crash into saturation (VCEV_{CE} collapses to ~0.2 V); at the bottom you fall into cut-off (IC0I_C \approx 0).

The output flattens at those rails — that's clipping.

  • Hit saturation (top of load line)VCEV_{CE} clamped near 0.2 V. Output flat-tops at low VoutV_{out}.
  • Hit cut-off (bottom of load line)IC0I_C \approx 0, VCEV_{CE} pulled up to VCCV_{CC}. Output flat-tops at high VoutV_{out}.
  • Stay in the active region — the only place the small-signal model holds. Outside the active region, AvA_v formulas don't apply; the transistor behaves nonlinearly.

3.5 Why the Q-point at VCC/2V_{CC}/2 maximises swing

Place the Q-point at VCC/2V_{CC}/2 and the load-line distance to saturation equals the distance to cut-off. Equal headroom → maximum symmetric swing before clipping.

👉 Off-centre Q-point = lopsided swing room. Centred Q-point = full swing in both directions.

3.6 The same picture for FETs

The BJT construction above applies equally to a CS FET amplifier — just swap iBi_B for vGSv_{GS} as the input variable and VCEV_{CE} for VDSV_{DS} at the output.

The key difference: the FET is a voltage-controlled device, so the input axis on the diagonal shows vGS(ωt)v_{GS}(\omega t) — a voltage swing, not a current swing. No VBEV_{BE} drop to manage; the gate draws no DC current.

1.0V1.5V2.0V2.5V3.0VVGSVDD/(RD+RS)VDDQ (VGS=2.5V)↑ peak (VGS=3.0V)→ triode↓ trough (VGS=2.0V)→ cut-off0246810120123456VDS (V)ID (mA)VDSQIDQID,maxID,minVDS,minVDS,maxTriodeSaturation (active) regionCut-off (VGS ≤ Vth)iD(ωt)ωtVDS(ωt) — inverted180° ↕
Figure 4. FET version of the same construction. A small vGSv_{GS} swing (diagonal axis) moves the operating point along the load line; VDS(ωt)V_{DS}(\omega t) swings INVERTED with much larger amplitude — that's voltage amplification. FET saturation here is theactive region; triode plays the role of BJT saturation.

In the FET saturation region, IDk2(VGSVth)2I_D \approx \frac{k}{2}(V_{GS}-V_{th})^2— a square-law relationship. Small-signal gain is still gm(RDro)-g_m(R_D \| r_o), but gm=k(VGSVth)g_m = k(V_{GS}-V_{th}) depends on the Q-point, whereas BJT gm=IC/VTg_m = I_C/V_T scales purely with collector current.

👉 Both figures tell the same story: a small AC input tilts the operating point along a fixed load line, and the VoutV_{out} waveform on the bottom axis is always an inverted, amplified copy.

Simple analogy — a swing set with end stops

  • The swing's resting position = the Q-point on the load line.
  • The end stops = saturation (one side) and cut-off (the other).
  • Pushing the swing too hard = the swing crashes into an end stop and stops moving smoothly — that's what clipping looks like at the output.
  • Park the swing in the middle to use the full range without hitting either stop.

👉 Try it in the simulator — push the VinV_{in} slider hard and watch the VoutV_{out} waveform clip when the swing exceeds the Q-point's headroom.

4. Input and output impedance

RinBJT: R1∥R2∥rπFET: RG1∥RG2vinAAv·vinRoutBJT: RC∥roFET: RD∥roRL
Figure 5. R_in (looking into base/gate) and R_out (looking into collector/drain) as Thevenin equivalents.

👉 Simple analogy — entrance and exit doors

  • RinR_{in} = how easy is it for the signal source to push current INTO the amp? Smaller RinR_{in} = harder to drive.
  • RoutR_{out} = how stiff is the output? Smaller RoutR_{out} = drives any load perfectly.
  • An ideal voltage amp has infinite RinR_{in} and zero RoutR_{out}.

4.1 RinR_{in} (BJT)

Rin=R1R2rπR_{in} = R_1 \| R_2 \| r_{\pi}. Typically a few kΩ — moderate but not huge.

4.2 RinR_{in} (FET)

Rin=RG1RG2R_{in} = R_{G1} \| R_{G2} (often hundreds of kΩ to MΩ). FETs are inherently high-impedance at the gate.

4.3 RoutR_{out} (both)

Rout=RCroR_{out} = R_C \| r_o (CE) or RDroR_D \| r_o (CS). Set mostly by RCR_C / RDR_D since ror_o is large.

Where:

  • rπ=β/gmr_{\pi} = \beta / g_m from Topic 1 — typically 1–5 kΩ at IC1mAI_C \approx 1\,\text{mA}.
  • ro=VA/ICr_o = V_A / I_C from Topic 1 — typically 50–500 kΩ; usually larger than RCR_C so it doesn't dominate.

5. The role of RER_E and CEC_E

Why RER_E exists (DC bias stability)

RER_E creates negative feedback at DC that prevents thermal runaway. If ICI_C rises due to temperature, the voltage across RER_E increases, which reduces VBEV_{BE} — pulling the current back down. This self-correcting loop keeps the Q-point stable.

RER_E also improves linearity (less distortion) because the feedback linearises the exponential ICI_CVBEV_{BE} relationship. The trade-off: it reduces AC gain unless bypassed.

RER_E = stability + feedback + linearity — but lower gain. That's where CEC_E comes in.

Why CEC_E exists (AC gain boost)

CEC_E is connected in parallel with RER_E. At signal frequencies it acts as a short circuit, effectively removing RER_E from the AC path. At DC the capacitor is open — RER_E still sets the bias.

  • Without CEC_E — emitter degeneration: lower gain, better stability and linearity.
  • With CEC_E — full gmRCg_m R_C gain for AC, DC stability preserved via RER_E.

The bypass capacitor in detail

Without CE (degenerated)vinvout (small)With CE (full gain)vinvout (large, inverted)
Figure 6. Without C_E the output is small (degenerated). With C_E the output is large — full gain restored.

👉 Simple analogy — a valve and a release pipe

  • RER_E is a valve that fights signal swing (negative feedback).
  • CEC_E is a release pipe that bypasses the valve at signal frequencies.
  • DC water still flows through the valve; AC water shortcuts around it.
  • 👉 Bypass cap = full gain at signal frequencies; full bias stability at DC.

5.1 The problem

Without CEC_E, the emitter voltage moves with the signal, reducing the effective vbev_{be} that drives the transistor. This negative feedback lowers gain.

5.2 The fix

Add CEC_E in parallel with RER_E. At signal frequencies CEC_E acts as a short, holding the emitter at AC ground.

5.3 At DC, CEC_E is open

DC bias is unaffected — the full RER_E sets the Q-point. This is the magic of “AC-only feedback bypass.”

AvRCRE(without bypass — degenerated)A_v \approx -\frac{R_C}{R_E} \quad \text{(without bypass — degenerated)}
AvgmRC(with bypass — full gain)A_v \approx -g_m R_C \quad \text{(with bypass — full gain)}

6. A first taste of bandwidth — Miller effect

BrπECgmvberoCμCμ·(1+|Av|)Miller reflected
Figure 7. C_μ bridges input and output nodes. At the input it appears multiplied by (1 + |A_v|) — the Miller effect.

👉 Simple analogy — a pole vault landing pit that grows

  • CμC_{\mu} is a small landing pit at the input.
  • High gain inflates the pit by (1+Av)(1 + |A_v|) — the input now sees a huge soft landing zone.
  • The bigger the pit, the longer it takes to land (lower bandwidth).
  • 👉 The cascode (Topic 4) is the standard fix.

6.1 The catch

High gain has a price: the collector-base capacitance CμC_{\mu} appears at the inputmultiplied by (1+Av)(1 + |A_v|) — called the Miller effect.

6.2 Why

The output swings at AvA_v times the input. The voltage across CμC_{\mu} is therefore (1+Av)(1 + |A_v|) times the input — drawing far more current at the input node.

6.3 Result

The CE / CS bandwidth rolls off at:

Cin,Miller=Cμ(1+Av)C_{in,Miller} = C_{\mu} \cdot (1 + |A_v|)
f3dB12πRSCin,Millerf_{3dB} \approx \frac{1}{2\pi \cdot R_S \cdot C_{in,Miller}}

Where:

  • CμC_{\mu} — typically a few pF for a small-signal BJT.
  • RSR_S — the source resistance driving the amplifier.
  • Av|A_v| — the magnitude of the voltage gain.
CE / CS = inverting voltage amplifier with high gain. Bypass cap restores full gain. Input/output impedance are moderate. Miller capacitance limits bandwidth — a problem the cascode (Topic 4) solves.

Try it in the simulator

Open the Simulate tab to explore the CE & CS Amplifier interactively. Toggle the bypass capacitor to feel the difference between full gain and degenerated gain. Slide RLR_L from high to low and watch the gain drop as the load draws more current. Increase VinV_{in} until the VoutV_{out} waveform clips — that's the Q-point swing limit in action.

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