Transistor Small-Signal Models — Worked Example

Analog Electronics · Small-Signal Models · Example

2N3904 CE stage at IC=1mAI_C = 1\,\text{mA}

Given: IC=1mAI_C = 1\,\text{mA}, β=150\beta = 150, VA=100VV_A = 100\,\text{V}, VT=25mVV_T = 25\,\text{mV}.

Find: gmg_m, rπr_{\pi}, ror_o.

  1. Transconductance.
    gm=ICVT=1mA25mV=40mA/Vg_m = \frac{I_C}{V_T} = \frac{1\,\text{mA}}{25\,\text{mV}} = 40\,\text{mA/V}
    This is the slope of the ICI_CVBEV_{BE} curve at the Q-point; it scales linearly with bias current.
  2. Base-emitter resistance.
    rπ=βgm=1500.040S=3,750Ω=3.75kΩr_{\pi} = \frac{\beta}{g_m} = \frac{150}{0.040\,\text{S}} = 3{,}750\,\Omega = 3.75\,\text{k}\Omega
    rπr_{\pi} is the input resistance looking into the base in the small-signal model.
  3. Output resistance (Early effect).
    ro=VAIC=100V1mA=100kΩr_o = \frac{V_A}{I_C} = \frac{100\,\text{V}}{1\,\text{mA}} = 100\,\text{k}\Omega
    A large ror_o means the transistor looks like a good current source; smaller VAV_A (or higher ICI_C) degrades it.
  4. Sanity check. The three parameters are consistent: gmrπ=40×103×3750=150=βg_m \cdot r_{\pi} = 40 \times 10^{-3} \times 3750 = 150 = \beta. This identity always holds and is a quick verification.
At IC=1mAI_C = 1\,\text{mA}: gm=40mA/Vg_m = 40\,\text{mA/V}, rπ=3.75kΩr_{\pi} = 3.75\,\text{k}\Omega, ro=100kΩr_o = 100\,\text{k}\Omega. Doubling ICI_C doubles gmg_m and halves both rπr_{\pi} and ror_o.